• 专利标题:   Formation of graphene film used for e.g. electronic materials for e.g. electronic device involves reduction process which heats metal film, graphene film growth process which heats heated metal film in mixed gas, and cooling process.
  • 专利号:   JP2013237575-A
  • 发明人:   YOSHII S, NOZAWA K, MATSUKAWA N
  • 专利权人:   PANASONIC CORP
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2013237575-A 28 Nov 2013 C01B-031/02 201378 Pages: 9 Japanese
  • 申请详细信息:   JP2013237575-A JP110227 14 May 2012
  • 优先权号:   JP110227

▎ 摘  要

NOVELTY - A graphene film is formed by reduction process (a) which heats metal film in atmosphere containing hydrogen gas, graphene film growth process (b) which heats heated metal film in mixed gas atmosphere containing 10-1000 ppm propylene gas and hydrogen gas, and cooling process (c) which cools superheated metal film. USE - Formation of graphene film used for electronic materials, semiconductor thin film, electrode material and transparent conductive film for electronic device or energy device. ADVANTAGE - Graphene film has in-plane uniformity and high reproducibility, and less damage. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the process of forming the graphene film. (Drawing includes non-English language text). Reduction process (a) Graphene film growth process (b) Cooling process (c)