▎ 摘　　要

NOVELTY - The transistor has graphene bending circuit that is formed on first wafer. The obstacle regulating circuit is included in CMOS device layer which is combined with the source. The drain is contacted with graphene bending circuit. The obstacle regulating circuit is formed in second wafer which is provided with drain contacts. The first insulation layer surrounds graphene bending circuit. The source is extended in graphene bending circuit and first wafer. The contacts are extended to second insulation layer. USE - Transistor. ADVANTAGE - The static electrical manpower is induced easily, and structure of the transistor is simplified. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacturing room of transistor; and (2) method for manufacturing transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the transistor.