• 专利标题:   Preparing hedgehog-shaped structure bismuth sulfide-graphene composite nano material, involves adding oxidized graphene into deionized water, and obtaining oxidized graphene, and adding thiourea and continuously magnetic stirring, centrifuging solution after reaction, cleaning, and vacuum drying.
  • 专利号:   CN115389573-A
  • 发明人:   GAO F, LIU X, GAO Y, YIN C, HAO J, LIU C, WANG Y, YANG Y
  • 专利权人:   HARBIN INST TECHNOLOGY, CHINA ELECTRONICS SCI TECH NO 49 RES I
  • 国际专利分类:   B82Y040/00, G01N027/12
  • 专利详细信息:   CN115389573-A 25 Nov 2022 G01N-027/12 202311 Chinese
  • 申请详细信息:   CN115389573-A CN11072893 02 Sep 2022
  • 优先权号:   CN11072893

▎ 摘  要

NOVELTY - Preparation method of hedgehog-shaped structure bismuth sulfide- graphene composite nano material, involves(1)adding oxidized graphene into deionized water, obtaining oxidized graphene concentration is 0.01-0.05mg/mL, then adding bismuth nitrate pentahydrate, magnetic stirring, then adding thiourea, continuously magnetic stirring to obtain reaction liquid; concentration of bismuth nitrate pentahydrate in the reaction solution is 0.01-0.03mol/L, concentration of 0.15-0.25mol/L;(2) transferring reaction liquid reaction kettle, reacting for 12-14h at 120-160℃ to obtain reaction solution, (3) centrifuging solution after reaction, cleaning, vacuum drying the precipitate after centrifuging and cleaning to obtain the hedgehog-shaped structure bismuth sulfide-graphene composite nano material. USE - Preparing hedgehog-shaped structure bismuth sulfide-graphene composite nano material. ADVANTAGE - The method has simple technique, high repeatability, small environment pollution, and effectively reduces the material agglomeration. The hedgehog-shaped structure of bismuth sulfide-graphene composite nanomaterial can effectively improve conductive performance, and has excellent nitrogen dioxide sensitive characteristics room temperature. The gas sensor prepared based on composite nano material has high response value, room temperature work and so characteristics, and is applied to the gas sensor field.