▎ 摘　　要

NOVELTY - Reusing garnet substrates in single crystal epitaxial growth comprises cleaning the garnet single crystal substrate, forming a double-layer graphene structure on the cleaned garnet single crystal substrate; using a pulsed laser deposition method to grow a garnet seed crystal layer on a single crystal substrate with a double-layer graphene structure; the specific process is putting the single-crystal substrate with double-layer graphene structure and the garnet target to be grown into a pulsed laser deposition growth chamber, and evacuating to below 10-5Pa; controlling the surface temperature of the substrate to 700-750℃, turning on the pulsed laser, setting the energy of the laser beam to 250mJ, and the laser pulse frequency to 3Hz, and perform pre-growth for 1min; after the pre-growth is completed, inject oxygen into the chamber to control the oxygen partial pressure in the chamber at 8-10Pa. USE - Method for reusing garnet substrates in single crystal epitaxial growth. ADVANTAGE - The method uses the composite film structure of substrate double- layer graphene seed crystal layer/wafer layer, the double-layer graphene used as the single crystal film release layer so that the graphene can pass through the surface electrostatic field to the single crystal film growth motifs or the crystal orientation of the crystal orientation, influence the arrangement orientation of the seed crystal layer growth base element, transfer the lattice constant double-layer graphene and only vanderwaals force exists between the base layer and the graphene layer and the crystal layer, and non- chemical bonding, uses adhesive tape and other external force to easily transfer thick film realizing the repeated use of the garnet substrate. DETAILED DESCRIPTION - Reusing garnet substrates in single crystal epitaxial growth comprises cleaning the garnet single crystal substrate, forming a double-layer graphene structure on the cleaned garnet single crystal substrate; using a pulsed laser deposition method to grow a garnet seed crystal layer on a single crystal substrate with a double-layer graphene structure; the specific process is putting the single-crystal substrate with double-layer graphene structure and the garnet target to be grown into a pulsed laser deposition growth chamber, and evacuating to below 10-5Pa; controlling the surface temperature of the substrate to 700-750℃, turning on the pulsed laser, setting the energy of the laser beam to 250mJ, and the laser pulse frequency to 3Hz, and perform pre-growth for 1min; after the pre-growth is completed, inject oxygen into the chamber to control the oxygen partial pressure in the chamber at 8-10Pa, continue to grow by pulsed laser deposition for 1-2 hours to obtain a garnet film as a garnet seed layer; performing annealing treatment on the substrate with the composite film, the annealing temperature is 800-900℃, and the annealing time is 4 hours; cleaning the substrate with the composite film after the annealing treatment, using liquid phase epitaxy to grow a garnet wafer layer on the cleaned substrate obtained; the specific process is preparing the growth melt; then, putting the cleaned substrate obtained into the prepared melt, and growing the garnet film by liquid phase epitaxy, the growth temperature is 800-950℃, and the substrate speed is 100rpm, the growth time is 10-1200min, after the growth is completed, washing and removing the residue, and the garnet wafer layer can be obtained; peeling off the substrate on which the garnet wafer layer was grown, and peeling off the thick film formed by the double-layer graphene, the garnet seed crystal layer and the garnet wafer layer.