• 专利标题:   Composite two-dimensional micron-sized silicon wafer comprises two-dimensional micron-sized silicon wafer, titanium dioxide, and graphene oxide.
  • 专利号:   CN113363455-A, CN113363455-B
  • 发明人:   LUO W, XIA H, SU W, LIU J, FANG C, HUANG J, LI X, LIU B
  • 专利权人:   UNIV GUANGDONG TECHNOLOGY
  • 国际专利分类:   C01B032/198, C01B033/18, C01G023/053, H01M010/0525, H01M010/42, H01M004/38, H01M004/62
  • 专利详细信息:   CN113363455-A 07 Sep 2021 H01M-004/38 202191 Pages: 18 Chinese
  • 申请详细信息:   CN113363455-A CN10626592 04 Jun 2021
  • 优先权号:   CN10626592

▎ 摘  要

NOVELTY - Composite two-dimensional micron-sized silicon wafer comprises two-dimensional micron-sized silicon wafer, titanium dioxide, and graphene oxide. The titanium dioxide is coated on surface of two-dimensional micron-sized silicon wafer. The graphene oxide is coated on surface of titanium dioxide. The composite two-dimensional micron-sized silicon wafer is used as cathode material of lithium ion battery. USE - Composite two-dimensional micron-sized silicon wafer. ADVANTAGE - The product solves the problem of low cycle stability, low cycle number upper limit, poor conductivity, poor rate performance, and easy generation of lithium dendrites during high-power charging which can cause thermal runaway problems in lithium batteries. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of composite two-dimensional micron-sized silicon wafer comprising using tetraethyl orthosilicate as raw material, using sodium chloride template method to obtain micron-sized silica chips, using micron-sized silica chips as raw material, obtaining two-dimensional micron-sized silica chips by magnesium thermal reduction method, using two-dimensional micron-scale silicon wafer and isopropyl titanate as raw materials, obtaining two-dimensional micron-scale silicon wafer/titanium dioxide composite material through sol-gel method, adding two-dimensional micron-scale silicon wafer/titanium dioxide composite material to graphene oxide solution for ultrasonic mixing, filtering, drying to obtain two-dimensional micron-scale silicon wafer/titanium dioxide/graphene oxide composite material, mixing two-dimensional micron silicon wafer/titanium dioxide/graphene oxide composite material and pore-forming agent in heating device, treating with inert gas, and calcining at high temperature.