▎ 摘　　要

NOVELTY - Preparing single-layer graphene, comprises (i) taking single crystal silicon carbide substrate, (ii) placing in a vacuum preparation chamber and heating and removing water vapor and residues adsorbed on surface of single crystal silicon carbide, (iii) heating to obtain silicon carbide surface obtain a buffer layer or coexisting surface of buffer layer and single-layer epitaxial graphene, (iv) heating metal source in crucible, and (v) opening baffle of metal beam source and depositing of metal in atom to obtain single crystal silicon carbide sample and covering surface, and (vi) annealing single crystal silicon carbide substrate and covering by a metal maintaining at 770-1020 K for 15-30 minutes, inserting metal in atoms under buffer layer and changing buffer layer to single-layer graphene or connected to original epitaxial graphene to obtain single-layer graphene. USE - The single-layer graphene is useful for microelectronics, superconductivity and strain engineering (claimed). ADVANTAGE - The method produces the large-area graphene and control the layer thickness of graphene. DETAILED DESCRIPTION - Preparing single-layer graphene with a large area using a metal intercalation layer, comprises (i) taking single crystal silicon carbide substrate as growth substrate for epitaxial graphene, (ii) placing single crystal silicon carbide substrate in a vacuum preparation chamber and heating to 800-850K for degassing, removing water vapor and residues adsorbing on surface of single crystal silicon carbide, (iii) heating single crystal silicon carbide substrate to 1470-1620 K and maintaining for 5-15 minutes to obtain silicon carbide surface form a buffer layer or coexisting surface of buffer layer and single-layer epitaxial graphene, (iv) heating metal source in crucible, and (v) maintaining temperature of single crystal silicon carbide substrate at 80 K, opening baffle of metal beam source and depositing of metal in atom to obtain a single crystal silicon carbide sample and covering surface by a metal in island, and (vi) annealing single crystal silicon carbide substrate and covering by a metal maintaining at 770-1020 K for 15-30 minutes, inserting metal in atoms under buffer layer and changing buffer layer to single-layer graphene or connected to original epitaxial graphene to obtain single-layer graphene.