• 专利标题:   Transfer film used for manufacturing transparent conductive laminate, consists of silicon thin film as mold release layer, thin metal film and transparent conductive film including graphene, sequentially formed on base film.
  • 专利号:   JP2015072767-A, JP5756834-B2
  • 发明人:   SHIMADA N
  • 专利权人:   OIKE KOGYO KK
  • 国际专利分类:   B32B015/08, B32B027/00, B32B009/00, C01B031/02, H01B013/00, H01B005/14
  • 专利详细信息:   JP2015072767-A 16 Apr 2015 H01B-005/14 201529 Pages: 14 Japanese
  • 申请详细信息:   JP2015072767-A JP207168 02 Oct 2013
  • 优先权号:   JP207168

▎ 摘  要

NOVELTY - A transfer film consists of mold release layer, thin metal film and transparent conductive film including graphene as a main component, sequentially formed on base film. The mold release layer is a silicon thin film. The ratio of silicon with respect to silicon bonded to oxygen in the silicon thin film is 50% or less. USE - Transfer film is used for manufacturing transparent conductive laminate (claimed). Uses include but are not limited to transparent electrode for liquid crystal display, plasma display, organic electroluminescent display and solar cell, touchscreen, touch sensor and electromagnetic shielding material. ADVANTAGE - The transfer film having excellent peeling characteristics is manufactured efficiently with high quality and high productivity by simple method. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of transfer film; and (2) manufacture of transparent conductive laminate.