• 专利标题:   Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.
  • 专利号:   CN114318490-A, CN114318490-B
  • 发明人:   ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H
  • 专利权人:   UNIV HANGZHOU DIANZI
  • 国际专利分类:   C30B001/10, C30B029/02
  • 专利详细信息:   CN114318490-A 12 Apr 2022 C30B-001/10 202265 Chinese
  • 申请详细信息:   CN114318490-A CN11584911 22 Dec 2021
  • 优先权号:   CN11584911

▎ 摘  要

NOVELTY - Preparing high purity single crystal graphene in large scale comprises (i) preparing silk fibroin solution; (ii) dropping the silk fibroin solution on the quartz sheet, spin coating by spin coater, drying, repeating operation for 10 times to obtain the film and drying the film to obtain macromolecule carbon-containing organic film; (iii) placing the quartz sheet and high molecular carbon-containing organic film in the reaction cavity, and using microwave plasma technology to process the high molecular carbon containing organic film to obtain powder; and (iv) calcining the powder in the vacuum furnace under the vacuum condition, naturally cooling to room temperature and taking out to obtain high purity single crystal graphene. USE - The method is useful for preparing high purity single crystal graphene in large scale. ADVANTAGE - The method avoids the safety problems caused by the widespread use of gas as a carbon source, and does not cause pollution caused by the product graphene.