▎ 摘　　要

NOVELTY - Printing and growing of three-dimensional conducting structure of elementary metal on substrate using atmospheric pressure plasma jet involves supplying the solution into the plasma as an aerosol, and reducing the oxidation state of the metal by the reactive plasma species to form elementary metal on the substrate, in which the elementary metal grows vertically to form three-dimensional structure. The organics in the solution is fully reduced and removed to obtain resultant film with pure metallic content in dry form. The metal to-be-printed is in a metal compound solution comprising metal having oxidation states of 0, 1+, 2+ in solution. USE - Printing and growing of three-dimensional conducting structure of elementary metal used for three-dimensional packaging, interconnects, filling through holes in printed circuit board and electrocatalysis (all claimed). ADVANTAGE - The method print conducting materials with controlled morphology, oxidation state and electronic structure on flexible substrates, displays, semiconductors, plastics and energy related materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of growing nanowire, which involves exposing metal or metal oxide surface to an atmospheric pressure plasma. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the through silicon via (TSV) copper fill using plasma processing. Nanoparticle/microparticle colloid input (1) Gas supply line for in situ processing (2,3) Plasma jet nozzle (4) Plasma jet printer nozzle (5)