▎ 摘　　要

NOVELTY - Thin-film structure comprises a substrate, a nanocrystalline graphene layer (10) on the substrate, and a two-dimensional material layer (20) on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more with specific nanocrystalline graphene layer. USE - Thin-film structure used in semiconductor element (claimed). ADVANTAGE - The thin-film structure has excellent mechanical, thermal, and electrical property, increased nucleation density of a two-dimensional material layer, and greatly decreased manufacturing time. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. a semiconductor element, which comprises: a thin-film structure including a nanocrystalline graphene layer and a two-dimensional material layer on the nanocrystalline graphene layer; and 2. a method of manufacturing a thin-film structure, which involves: forming a nanocrystalline graphene layer on a substrate in a reaction chamber; and forming a two-dimensional material layer on the nanocrystalline graphene layer.