▎ 摘　　要

NOVELTY - The method involves applying first voltage to a back gate (105) of a graphene-based memory device (100) and second voltage to a first graphene layer (101) of the graphene-based memory device, where the back gate is located on a side of a second graphene layer (102) from an insulation layer (106) and the first graphene layer is bent into an opening (103) of the insulation layer to contact the second graphene layer based on electrostatic force generated by applying the first voltage to the back gate. Third voltage is applied to the second graphene layer. USE - Method for representing data in a graphene-based non-volatile memory device e.g. flash memory, optical disk e.g. compact disk (CD) and DVD, magnetic computer storage device e.g. hard disk, floppy disk and magnetic tape, ROM, EPROM, electronically EPROM (EEPROM), programmable ROM (PROM) and CD-ROM, of a digital computer i.e. mainframe computer. Can also be used for a personal computer, workstation and a minicomputer. ADVANTAGE - The method allows the non-volatile memory device to be formed of two graphene layers programmable by electrostatic charge to hold program information when no power is supplied to the memory device, thus improving performance of the memory device in a cost-effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a memory device. Graphene-based memory device (100) Graphene layers (101, 102) Openings (103, 104) Back gate (105) Insulation layers (106, 107, 109, 110)