▎ 摘　　要

NOVELTY - Method for fabricating two-dimensional (2D) channel transistor using hexagonal-boron nitride (h-BN) layer as an encapsulation layer, involves growing an h-BN layer on 2D channel material present on a substrate and transferring the grown h-BN layer over a channel material present on a substrate, selectively etching at least one portion of the h-BN layer by inductively coupled plasma-reactive ion etching (ICP-RIE), where the selective etching step is carried out by exposing h-BN layer to sulfur hexafluoride plasma gas, treating etched h-BN layer in potassium hydroxide solution of a first pre-defined concentration at first pre-defined temperature to form defected h-BN layer, where the treating step is carried out by stirring potassium hydroxide solution with a magnetic bead, and re-etching defected h-BN layer in potassium hydroxide solution of a second pre-defined concentration at second pre-defined temperature for second pre-defined time to obtain selectively etched h-BN layer. USE - Method for fabricating 2D channel transistor using h-BN layer as encapsulation layer. ADVANTAGE - The selective etching of the h-BN layer results in better electrical contact between the h-BN layer and the graphene, does not damage encapsulated graphene for alleviating any damage to the graphene during the etching of the h-BN layer, and enables large scale etching of the h-BN layer enabling large-scale fabrication of the transistor. DETAILED DESCRIPTION - Method for fabricating 2D channel transistor using h-BN layer as an encapsulation layer, involves growing an h-BN layer on 2D channel material present on a substrate and transferring the grown h-BN layer over a channel material present on a substrate, selectively etching at least one portion of the h-BN layer by ICP-RIE, where the selective etching step is carried out by exposing h-BN layer to sulfur hexafluoride plasma gas at a predetermined gas flow rate, at a predetermined temperature, at a predetermined pressure, at a predetermined power of radio frequency and at a predetermined power of ICP for predetermined time, treating etched h-BN layer in potassium hydroxide solution of a first pre-defined concentration at a first pre-defined temperature for a first pre-defined time to form defected h-BN layer, where the treating step is carried out by stirring potassium hydroxide solution with a magnetic bead, and re-etching the defected h-BN layer in potassium hydroxide solution of a second pre-defined concentration at a second pre-defined temperature for a second pre-defined time to obtain selectively etched h-BN layer. An INDEPENDENT CLAIM is included for 2D transistor with material channel encapsulated using the h-BN layer selectively etching using the method.