▎ 摘　　要

NOVELTY - The device has a substrate (1), a lower electrode (2), the oxidation graphite alkenyl active layer (3), and an upper electrode (4). The material of the active layer of the graphene oxide is a graphene oxide or a chemical method for selective reduction of the graphene oxide (CrGO). The thickness of the active layer of the graphene oxide is 200 to 1000nm. USE - Oxidation graphite alkenyl diode dynamic random storage device. ADVANTAGE - The device has stable performance and high yield. The process is simple, the material is green and environmental protection, and can be used as an in-depth study and promotion. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the storage device. Substrate (1) Lower electrode (2) Oxidation graphite alkenyl active layer (3) Upper electrode (4)