▎ 摘　　要

NOVELTY - The device has an inorganic flexible substrate uniformly arranged with multi-buffer layers, a thermosensitive film, a fractal electrode and an insulating layer. Upper and lower ends of the fractal electrode are provided with an electrode port. The inorganic flexible substrate is soaked in acetone, absolute ethyl alcohol and de-ionized water. The inorganic flexible substrate is provided with a white mica, a gold mica, a fluorine crystal mica, a copper foil, a platinum foil, a graphene or a carbon cloth. The thermo-sensitive film is placed in a magnetic control sputtering system. A deposited thermo-sensitive film is placed in a tubular furnace to clean a photo-resist for annealing treatment based on annealing condition, where the annealing condition is followed by annealing atmosphere, lifting temperature rate, annealing temperature, heat preservation time to obtain a full inorganic flexible-type heat-sensitive device main body. USE - Full-inorganic flexible-type thermo-sensitive device. ADVANTAGE - The device has simple structure, light quality, better film crystallinity, small roughness, better sensitivity to temperature, better repeatability, simple operation, large area growth of the film and better film uniformity of growth. The device realizes photo-etching and ion etching so as to realize industrial production of the flexible device in convenient manner. The device has universality for development of film-type thermosensitive resistors. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for: a full-inorganic flexible-type thermo-sensitive device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical illustrating a relationship between temperature and resistance of thermo-sensitive film of a full-inorganic flexible-type thermo-sensitive device manufacturing method.