▎ 摘　　要

NOVELTY - Fabricating hexagonal boron nitride (104) comprises: placing a catalytic metal in a chamber, where the catalytic metal has a hexagonal crystal structure and a lattice mismatch of 0-15% with hexagonal boron nitride; and growing hexagonal boron nitride on the catalytic metal at a temperature of less than or equal to800degreesC while supplying a nitrogen source and a boron source into the chamber. USE - The method is useful for fabricating hexagonal boron nitride, which is useful in electric device and semiconductor device (all claimed). ADVANTAGE - The method provides hexagonal boron nitride that is epitaxially grown at a relatively low temperature. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (a) a hexagonal boron nitride, fabricated by the method, where the hexagonal boron nitride has a mono-crystalline structure; (b) an electric device comprising the hexagonal boron nitride and a two-dimensional material on the hexagonal boron nitride; and (c) semiconductor device (100), comprising a substrate including a source region and a drain region that each includes a doped semiconductor, a first hexagonal boron nitride and a second hexagonal boron nitride fabricated by the method on the substrate, the first hexagonal boron nitride being on the source region, and the second hexagonal boron nitride being disposed on the drain region, a source electrode on the first hexagonal boron nitride and a drain electrode on the second hexagonal boron nitride. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a schematic structure of the semiconductor device including hexagonal boron nitride. Semiconductor device (100) Semiconductor layer (102) Hexagonal boron nitride (104) Metal layer (106) Spacer (110)