▎ 摘　　要

NOVELTY - The method involves partially covering sample (10) with a first dielectric release layer (12). A mask (15) is provided on the release layer, and the mask is selectively etched. The release layer is selectively etched the through etched mask preferably with a first gaseous fluorine, and the mask is removed. A sample carrier (20) such as a wafer is provided, and the sample carrier is covered with an etch protection layer (21) such as silicon dioxide protection layer. The etched sample is transferred to the sample carrier, and the combined carrier/sample is transferred to a dry etch tool. The release layer is under-etched through the remaining release layer so as to form cavity (18) underneath the release layer by using a gaseous etchant such as fluorine, sulfur Hexafluoride, xenon difluoride and hydrogen fluoride vapor. USE - Method for producing product such as light sail mirror, nanomechanical device, optomechanical mirror, NEMS, MEMS, nanobridge, hole, ribbon, edge and sensor for medical sensing, navigation, computing, robotics, communication, manufacturing, chemical sensing, providing ultrasound, acceleration, and mass sensing (all claimed) with high selectivity dry release of dielectric structure. ADVANTAGE - The high tensile strength material is found to improve the stability of the sail and the mechanical quality factor, and the quality of the dielectric release layer is improved. DETAILED DESCRIPTION - INORGANIC CHEMISTRY - The dielectric release layer is selected from silicon nitride, silicon carbide, indium gallium phosphide, silicon, diamond, graphene, and combinations thereof. DESCRIPTION OF DRAWING(S) - The drawings show schematic views illustrating the process for producing product with high selectivity dry release of dielectric structure. Sample (10) Dielectric release layer (12) Mask (15) Cavity (18) Sample carrier (20) Etch protection layer (21)