▎ 摘　　要

NOVELTY - Method for forming interconnect structure involves etching a lithographic patterning structure to form a partially patterned structure having first conductive lines (202) and to expose a top surface of a first etch stop layer (210), etching the first etch stop layer of the patterned structure to form second conductive lines (212) and expose a top surface of a barrier layer (106), and forming self-aligned via. USE - Method for forming interconnect structure used for semiconductor device. ADVANTAGE - The method has high etch rate metal etch to etch top metal layer to minimize hard mask sputtering. DESCRIPTION OF DRAWING(S) - The drawing shows an isometric view of the interconnect structure. 102Substrate 106Barrier layer 202First conductive lines 210First etch stop layer 212Second conductive lines