▎ 摘　　要

NOVELTY - The method involves forming a spreading layer (14) of two-dimensional material i.e. graphene (15), on a silicon carbide substrate (12), where the spreading layer includes a monolayer. A stressor layer (16) is formed on the spreading layer by depositing one of metal, oxide and semiconductor to induce stress in the closest monolayer of the spreading layer, where the stressor layer applies stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer in which the closest monolayer remains on the stressor layer. USE - Method for transferring a two-dimensional material i.e. graphene, to a silicon carbide substrate i.e. wafer, in a semiconductor device for a microelectronics application. Can also be used for molybdenum disulfide or tungsten disulfide, boron nitride, mica, dichalcogenide and complex oxide. ADVANTAGE - The method enables a handle substrate or tape to be employed, so that stress is controlled as stress in the stressor layer to crack the layer being exfoliated during the exfoliation process such that the exfoliated film can be cracked and the film is stuck to the tape or handle substrate so as to prevent the shrinking of the thicker films to avoid cracking in a better and robust manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a handle substrate adhered to a stressor layer for handling split off monolayers of graphene from a buffer layer. Silicon carbide substrate (12) Spreading layer (14) Graphene (15) Stressor layer (16) Adhesive or adhering layer (18) Handle or flexible substrate/tape (20)