▎ 摘　　要

NOVELTY - The preparation of solar cell involves preparing window layer on gallium arsenide epitaxial wafer surface, preparing heavily doped gallium arsenide cap layer on surface of window layer, preparing front electrode on heavily doped gallium arsenide cap layer surface, forming back electrode on gallium arsenide epitaxial wafer surface away from window layer, etching heavily doped gallium arsenide cap layer between front electrode grid lines, exposing window layer, preparing graphene layer on exposed window layer surface and preparing anti-reflective layer on surface of graphene layer. USE - Preparation of graphene/gallium arsenide solar cell (claimed). ADVANTAGE - The method enables the preparation of solar cell by simple process at low cost, and improves the conversion efficiency of gallium arsenide solar cells. DETAILED DESCRIPTION - The preparation of graphene/gallium arsenide solar cell involves preparing window layers on the surface of gallium arsenide epitaxial wafers, preparing heavily doped gallium arsenide cap layer on the surface of the window layer, preparing a front electrode on the surface of the heavily doped gallium arsenide cap layer, forming a back electrode on the surface of the gallium arsenide epitaxial wafer away from the window layer, etching the heavily doped gallium arsenide cap layer between the front electrode grid lines by chemical etching, exposing the window layer, preparing graphene layer on the exposed window layer surface, and preparing anti-reflective layer on the surface of graphene layer.