▎ 摘　　要

NOVELTY - Preparing graphene, comprises: (1) washing silicon carbide sample wafer, soaking the sample wafer in ammonium hydroxide and hydrogen peroxide solvent, and taking out, drying and soaking the sample wafer in hydrochloric acid and hydrogen peroxide solvent; (2) placing the washed sample wafer in a quartz tube and then heating; (3) heating a three-neck flask containing carbon tetrachloride liquid, entering the argon gas carrying with carbon tetrachloride steam in the tube and then reacting with silicon carbide; and (4) annealing the produced double layer carbon film sample wafer in the argon gas. USE - The method is useful for preparing graphene. ADVANTAGE - The method is capable of simply and economically preparing the graphene with smooth surface and reduced energy consumption in a safe manner. DETAILED DESCRIPTION - Preparing graphene, comprises: (1) standardly washing silicon carbide sample wafer, soaking the sample wafer in ammonium hydroxide and hydrogen peroxide solvent for 10 minutes, and taking out and then drying and soaking the sample wafer in hydrochloric acid and hydrogen peroxide solvent for 10 minutes; (2) placing the washed silicon carbide sample wafer in a quartz tube and then heating to 800-1100 degrees C; (3) heating a three-neck flask containing carbon tetrachloride liquid to 65-80 degrees C, introducing the argon gas carrying with carbon tetrachloride steam in the quartz tube, and reacting with silicon carbide to produce the double layer carbon film for 20-120 minutes; and (4) annealing the produced double layer carbon film sample wafer in the argon gas at 1000-1200 degrees C for 10-30 minutes to reform into double layer graphene. DESCRIPTION OF DRAWING(S) - The figure shows a flowchart of a method for preparing graphene (Drawing includes non-English language text).