▎ 摘　　要

NOVELTY - A thin film transistor comprises two dimensional graphene channel layer comprising 1,2,2a,3,4,4a,5,6,6a,7,8,8a,9,10,10a,11,12,12a-octadecahydro-coronene compound (I). USE - Thin film transistor for use in graphene device. ADVANTAGE - The thin film transistor has excellent semiconductor chip characteristics. DETAILED DESCRIPTION - A thin film transistor comprises two dimensional graphene channel layer comprising 1,2,2a,3,4,4a,5,6,6a,7,8,8a,9,10,10a,11,12,12a-octadecahydro-coronene compound of formula (I). R1=H, 1-8C alkyl, 1-10C alkoxy, di-1-4C alkyl amino alkoxy, or -(O-(CH2)a-O)b-R5; R5=1-4C alkyl; a=1-4; b=1-4; R2=4,4,5,5-tetramethyl-(1,3,2)dioxaborolane moiety; R3=H, I or aryl;and n=2-20. An INDEPENDENT CLAIM is also included for a method for manufacturing the thin film transistor involving contacting both ends of the channel layer with a source electrode, a gate electrode and a drain electrode, respectively, where the channel layer and gate insulating layer equipped between the gate electrode, and forming lithographic process after deposition of the source electrode and drain electrode of the gate insulating layer in the gate electrode. The gate electrode, source electrode, drain electrode are laminated after surface hydrophobic organic membrane phase process. The laminated hydrophobic organic membrane is heat treated on the gate insulating film. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a thin film transistor.'(Drawing includes non-English language text)'