▎ 摘　　要

NOVELTY - A silicon carbide substrate is cleaned in vacuum chamber of induction heating graphite boat. The chamber is evacuated to 1x 105 Pa by passing 0.7-0.9 atmosphere pure hydrogen at 1550-1600 degrees C for 15-20 minutes. The chamber is opened and cooled using opened pores of graphite cover of silicon carbide substrate. The chamber is closed and re-evacuated to 1x 105 Pa by passing 0.7-0.9 atmosphere argon gas at 1500-1650 degrees C for 15-20 minutes. The chamber is cooled to room temperature in argon atmosphere to obtain epitaxial graphene on surface of silicon carbide substrate. USE - Preparation of epitaxial graphene (claimed). ADVANTAGE - The method enables preparation of epitaxial graphene having excellent uniformity and electronic mobility, large domain area, with reduced disturbance of air flow and temperature, controlled rate of sublimation, reduced growing rate of graphene.