▎ 摘　　要

NOVELTY - The method involves forming first graphene on an underlayer (120). First multilayer graphene is formed on first area of the first graphene at first temperature by using source gas (130), where the first multilayer graphene comprises a portion of the first graphene corresponding to the first area, and temperature used to form the first graphene is different from the first temperature or source gas used to form the first graphene is different from the source gas. Second multilayer graphene is formed on second area of the first graphene provided adjacent to the first area at second temperature. USE - Method for forming a multilayer graphene for manufacturing various devices. Uses include but are not limited to a tunneling device, binary junction transistor, barristor, memory device, solar cell, photodetector, sensor, stackable device, transparent device and a light-emitting device. ADVANTAGE - The method enables reducing manufacturing costs and manufacturing duration, thus preventing damage to edge portions of the multilayer graphenes, and preventing problem of photoresist as the multilayer graphenes are formed on a set of pre-patterned underlayers. The method enables ensuring the multilayer graphene to provide better characteristics, so that a graphene device including the multilayer graphene can provide better performance. DETAILED DESCRIPTION - The graphene is a monolayer graphene. The method enables providing N-containing hydrocarbon compound that comprises pyridine. The hydrocarbon compound comprises one of benzene, ethylene, acetylene and triethylborane. The multilayer graphene is bilayer graphene. INDEPENDENT CLAIMS are also included for the following: (1) a method for manufacturing a graphene-containing device (2) a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a method for forming a multilayer graphene. Substrate (110) Underlayer (120) Source gas (130)