▎ 摘　　要

NOVELTY - The method involves depositing (204) a first material layer over a first substrate, and depositing (206) a graphene layer over the first material layer. After depositing (208) an amorphous silicon layer over the graphene layer, the amorphous silicon layer is bonded (210) to a second substrate to form an assembly. The assembly is annealed (212) to convert the amorphous silicon layer to a silicon oxide layer. The first substrate and the first material layer are removed (214,216) from the assembly to expose the graphene layer. USE - Method of making a pellicle for use in EUV lithography system. ADVANTAGE - The graphene layer can be made thick enough to avoid breakages during the pellicle's manufacturing, assembling, and handling processes. DESCRIPTION OF DRAWING(S) - The drawing is a flowchart illustrating a method of making a pellicle for use in a EUV lithography system. First material layer depositing step (204) Graphene layer depositing step (206) Amorphous silicon layer depositing step (208) Amorphous silicon layer/second substrate bonding step (210) Assembly annealing step (212) First substrate/ first material layer removing steps (214,216)