• 专利标题:   Memristive device used in crossbar array, has graphene (20) or graphite that is arranged between active region and bottom electrode or top electrode.
  • 专利号:   US2011240951-A1, US8546785-B2
  • 发明人:   YANG J, MIAO F, WU W, WANG S, WILLIAMS R S
  • 专利权人:   YANG J, MIAO F, WU W, WANG S, WILLIAMS R S, HEWLETTPACKARD DEV CO LP
  • 国际专利分类:   H01L021/20, H01L027/24, H01L045/00
  • 专利详细信息:   US2011240951-A1 06 Oct 2011 H01L-027/24 201167 Pages: 11 English
  • 申请详细信息:   US2011240951-A1 US751977 31 Mar 2010
  • 优先权号:   US751977

▎ 摘  要

NOVELTY - The memristive device (100) has a top electrode (14) crossing a bottom electrode (12) at non-zero angle. An active region (18) made of oxide, nitride and sulfide is arranged between the bottom and top electrodes, the active region having defects such as oxygen vacancies, nitrogen vacancies, and sulfur vacancies. Graphene (20) or graphite is arranged between the active region and the bottom electrode or the top electrode. The bottom electrode is arranged upon a gas blocking substrate. USE - Memristive device used in crossbar array (claimed). ADVANTAGE - The addition of graphene or graphite to predetermined areas of the memristive device can sufficiently isolate the active region from the environment, thus the deleterious gas interactions are prevented or reduced. The graphene or graphite has a crystalline structure which is impermeable to number of gases, including oxygen, nitrogen and sulfur gases, and thus the crystalline structure functions as a barrier to both gas release from, and gas absorption into, the active region. The memristive device including graphene or graphite is achieved improved endurance, stability, and non-volatility. Both the graphene and graphite are very thin, and thus do not add bulk to the device. The gas blocking function of the graphene/graphite is enhanced with the crystalline structure. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) crossbar array; and (2) method for making memristive device. DESCRIPTION OF DRAWING(S) - The drawing shows a semi-schematic, perspective view of a crossbar array including several memristive devices. Bottom electrode (12) Top electrode (14) Active region (18) Graphene (20) Memristive device (100)