• 专利标题:   Method for preparing graphene on insulating substrate, involves placing metal substrate on substrate, heating and introducing growth carbon source and hydrogen, forming four-layer structure product, heating, and soaking product into acidic solution.
  • 专利号:   CN113620279-A, CN113620279-B
  • 发明人:   TANG Z, ZENG F, WANG R, XU X
  • 专利权人:   UNIV SOUTH CHINA NORMAL
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN113620279-A 09 Nov 2021 C01B-032/186 202203 Chinese
  • 申请详细信息:   CN113620279-A CN10818216 20 Jul 2021
  • 优先权号:   CN10818216

▎ 摘  要

NOVELTY - The graphene preparation method involves placing a metal substrate on the insulating substrates, and heating and introducing growth carbon source and hydrogen to form a four-layer structure product of the substrate layer. The metal substrate layer and the second graphene layer are placed from bottom to top in sequence, and heated the product of first step. The metal substrates layer is softened, and soaked the product in an acidic solution. The softened metal substrate layers are removed to obtain a product of insulating base substrate/graphene structure. USE - Method for preparing graphene on insulating substrate. ADVANTAGE - The method provides a simple process, low cost of preparing graphene on the insulating substrate of the method, avoiding introducing the graphene from the metal substrate transferred to the surface of the substrate, so as to obtain the high quality of graphene product on the substrate. The graphene product quality of the prepared substrate is high.