• 专利标题:   Preparing two-dimensional graphene by vapor deposition involves cleaning copper foil, drying copper foil by using nitrogen, putting copper foil into quartz tube after drying and purging quartz tube with argon to exhaust air.
  • 专利号:   CN113716553-A
  • 发明人:   LI T, LIU C, CHEN L, QUE M, SUN Y, SUN J
  • 专利权人:   UNIV SUZHOU SCI TECHNOLOGY
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN113716553-A 30 Nov 2021 C01B-032/186 202214 Chinese
  • 申请详细信息:   CN113716553-A CN10914349 10 Aug 2021
  • 优先权号:   CN10914349

▎ 摘  要

NOVELTY - Preparing two-dimensional graphene by vapor deposition involves cleaning the copper foil, drying the copper foil by using nitrogen, and putting the copper foil into a quartz tube after drying. The quartz tube is subjected to purging with argon to exhaust air, and annealing the copper foil at high temperature in hydrogen and argon atmosphere, and after annealing is finished, rapidly cooling is carried out to the growth temperature of the graphene, and the flow rate of hydrogen and argon are adjusted, and benzene liquid is pumped into the quartz tube for reaction in a bubbling mode, and after the reaction is finished, temperature is cooled to room temperature, and then the gas is cooled to generate the two-dimensional graphene. USE - Method for preparing two-dimensional graphene by vapor deposition used in transparent conductive film, photoelectric detection, catalysis and biological detection. ADVANTAGE - The method enables to prepare two-dimensional graphene, which saves energy, saves cost, simplifies the process flow, and improves the safety of the process, and has no essence difference, suitable for field tube, flexible transparent film and other fields.