▎ 摘　　要

NOVELTY - Preparation of easy differentiation polycrystalline silicon wafers comprises selecting aluminum alloy powder and silicon carbide, mixing, atomize-spraying with graphene ethanol dispersion, mixing, and drying; adding into reaction kettle containing inorganic acid solution, acid-pickling at 20-70 degrees C for 5-10 hours, washing, separating, drying, and removing titanium, iron, and phosphorus impurities; introducing high-purity argon and refining gas with nitrogen as carrier and subjecting to low-temperature, medium-temperature, and high-temperature slag-making stage for slagging refining; vacuum degassing, microwave heating, gas blowing, slag refining for 0.5-10 hours at 4.0x 10-3 Pa, and cooling to room temperature; and taking out vacuum-treated jacket, welding, sealing jacket, isostatic pressing, machining round ingots, and bonding with core plates having different colors. USE - The method is used for preparing easy differentiation polycrystalline silicon wafers. ADVANTAGE - The silicon wafer has excellent fatigue strength, meets requirements of green metallurgy, and is energy saving and emission reducing.