▎ 摘　　要

NOVELTY - The filter (100) has two top gates (103) deposited on a bilayer graphene (102), where the two top gates define a channel in the bilayer graphene. Scattering defects (105) are located in a vicinity of the channel, produce a scattering between two energy valley states with opposite pseudospins in the bilayer graphene, couple subband states of opposite pseudospins and opens a pseudogap at a crossing point of the two subbands, and electrons are passed through the channel that is valley polarized in the bilayer graphene. USE - Graphene-based valley filter for semiconductor device i.e. FET. ADVANTAGE - The filter converts signals between electrical and valleytronic forms, thus leading to integration of electronic and valleytronic components. The filter provides robustness against configuration fluctuation. The filter utilizes valleytronic devices for processing units to mitigate power consumption problem in downscaling integrated circuits. DETAILED DESCRIPTION - The channel is in a form of a quantum wire or a nanoribbon. An INDEPENDENT CLAIM is also included for a method for operating a graphene-based valley filter. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene-based valley filter. Graphene-based valley filter (100) Bottom gate (101) Bilayer graphene (102) Two top gates (103) Scattering defects (105)