▎ 摘　　要

NOVELTY - The growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure involves providing substrates, source material (I), source material (II) and carbon source, heating the substrate, dissolving carbon source on surface of substrate, heating source material (I) and source substance (II) respectively, volatilizing, depositing and reacting transition metal chalcogenide compound material on the surface of the substrate, cooling substrate, and depositing graphene at interface between transition metal chalcogenide two-dimensional material and substrate. USE - Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure (claimed) used in microelectronic device. ADVANTAGE - The method enables growth of transition metal chalcogenide two-dimensional material-graphene heterostructure with high reproducibility. DETAILED DESCRIPTION - The growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure involves providing substrates, source material (I), source material (II) and carbon source, heating the substrate, dissolving carbon source on the surface of the substrate in the atmosphere of the protective gas, heating source material (I) and source substance (II) respectively, volatilizing, depositing and reacting transition metal chalcogenide compound material on the surface of the substrate where carbon is dissolved, cooling substrate at a certain cooling rate, and depositing graphene at the interface between transition metal chalcogenide two-dimensional material and substrate. An INDEPENDENT CLAIM is included for transition metal chalcogenide two-dimensional material-graphene heterostructure.