▎ 摘　　要

NOVELTY - The source has a growth substrate, a p-GaN thin film layer, a positive electrode, an insulating layer, a groove, a zinc oxide (ZnO) nanowire, a negative electrode, and a single layer of graphene. A p-gallium nitride (GaN) thin film layer is formed on the growth substrate. A positive electrode is provided on the p-GaN thin film layer. An insulating layer is formed on a portion of the p-GaN thin film layer. A recess is provided on the insulating layer. A single ZnO nanowire is placed in the groove to form a ZnO nanowire/p-GaN heterojunction. A negative electrode is formed on a side region of the recess. One end of the single-layer graphene contacts the negative electrode, and the middle portion covers the three upper surfaces of the ZnO nanowire. The electrons are injected into the p region from the n region, holes are injected into the n region from the p region, and unbalanced carriers above the equilibrium concentration are present in the vicinity of the heterojunction. USE - LED point light source based on vertical structure of graphene/single zinc oxide nanowire/p-gallium nitride film. ADVANTAGE - The electrons and holes can be recombined in the space charge region to generate photons. When the applied forward bias is increased, hole and electron injection is enhanced, and the luminous intensity is enhanced. The single-layer graphene has a large contact area with the ZnO nanowires, increases the carrier injection area, and improves the injection efficiency, thus improving the luminous efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing LED point light source based on vertical structure of graphene/single ZnO nanowire/p-GaN film. DESCRIPTION OF DRAWING(S) - The drawing shows a plan view and a cross-sectional view of an LED point light source.