▎ 摘　　要

NOVELTY - The method involves forming a substrate by graphite dilute. A graphene surface is formed with a BN thin film. A graphene edge is fixed with a patterned source and a part of the BN thin film. Metal catalyst layer deposition operation is performed. A metal catalytic layer is coated with catalyst. A surface of the BN thin film is formed with a source and drain electrode area. A drain metal electrode is formed with a hole. The BN thin film is formed with a grid medium layer. A gate is fixed with the grid medium layer. A source and drain metal electrode is made of nickel material. USE - Graphene contact resistance reducing method. ADVANTAGE - The method enables effectively realizing graphene contact resistance reducing process, metal catalytic layer etching process and lower hydrogen atmosphere annealing process, forming the metal catalytic layer, a BN thin film at an edge of the graphene surface and a Zigzag edge with a hole structure and improving subsequently deposited source drain metal electrode strong chemical binding performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene contact resistance reducing method.'(Drawing includes non-English language text)'