• 专利标题:   Nickel disulfide enhanced graphene-based surface-enhanced Raman scattering device comprises M-nickel disulfide/nickel sulfide-graphene specific structure.
  • 专利号:   CN111501043-A
  • 发明人:   SUI X
  • 专利权人:   QINGDAO FENGLUAN NEW MATERIAL TECHNOLOGY CO LTD
  • 国际专利分类:   C23C014/18, C23C014/35, C23C016/26, C23C016/30, C23C016/455, C23C028/00, G01N021/65
  • 专利详细信息:   CN111501043-A 07 Aug 2020 C23C-028/00 202069 Pages: 7 Chinese
  • 申请详细信息:   CN111501043-A CN10358303 29 Apr 2020
  • 优先权号:   CN10358303

▎ 摘  要

NOVELTY - Nickel disulfide (NiS2) enhanced graphene-based surface-enhanced Raman scattering (SERS) device comprises M-NiS2/NiS-graphene specific structure, where M is a precious metal nano-layer, NiS2/NiS is an alternating NiS2 and NiS nano-multilayer structure. USE - Used as NiS2 enhanced graphene-based SERS device. ADVANTAGE - The device increases detection sensitivity, can achieve Raman enhancement under a variety of excitation wavelengths, and broaden its Raman analysis application range. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing NiS2 enhanced graphene-based SERS device, comprising (i) using polystyrene colloidal sphere template as substrate, chemical vapor deposition of graphene layer on its surface; (ii) depositing alternate NiS2 and NiS nano-multilayer structures on the surface of the graphene layer by atomic layer; and (iii) magnetron sputtering precious metal nano-layers on the surface of alternating NiS2 and NiS nano-multilayer structures.