▎ 摘　　要

NOVELTY - Semiconductor structure comprises: a silicon carbide substrate (12) having a miscut angle of less than or equal to 0.1 degrees ; and a graphene layer (14) located on an upper surface of the silicon carbide substrate. USE - The semiconductor structure is useful in semiconductor device (all claimed), which includes diodes and bipolar-complementary metal-oxide-semiconductor devices. ADVANTAGE - The semiconductor structure: exhibits high hall mobility and desired electrical properties; and provides the semiconductor device with improved performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a semiconductor device comprising: the silicon carbide substrate; and at least one graphene-containing semiconductor device (80) located on top of the silicon carbide substrate, where the graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the silicon carbide substrate; and (2) forming the semiconductor structure, comprising: (a) selecting the silicon carbide substrate; and (b) forming the graphene layer on an upper surface of the silicon carbide substrate. DESCRIPTION OF DRAWING(S) - The figure shows a cross sectional views of a pictorial representation of graphene-containing semiconductor device that can be formed using the structure. Silicon carbide substrate (12) Graphene layer (14) Gate dielectric (52) Gate conductor (54) Graphene-containing semiconductor device (80)