▎ 摘　　要

NOVELTY - A semiconductor device comprises semiconductor structures (114) on substrate (100), each including first semiconductor pattern (114a) that has linear shape that extends in first direction and second semiconductor patterns (114b) that protrude in vertical direction from upper surface of first pattern, where the structures are spaced apart from each other in second direction perpendicular to first direction; first conductive pattern (110) formed in first trench between first patterns; first impurity region formed in opening in first pattern adjacent to a first sidewall of second pattern and includes impurity diffusion barrier pattern and polysilicon pattern doped with impurities; gate insulation pattern (134) arranged on first sidewall of each of the second semiconductor pattern; second conductive pattern extends in second direction on gate insulation pattern; and second impurity region arranged on each of the second semiconductor patterns. USE - Semiconductor device. ADVANTAGE - The impurity diffusion barrier pattern prevents diffusion of impurities doped in the polysilicon pattern. The floating body effect in the vertical transistor is reduced, and the semiconductor device has excellent operating characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a semiconductor device. Substrate (100) First conductive pattern (110) Semiconductor structures (114) First semiconductor pattern (114a) Second semiconductor pattern (114b) Gate insulation pattern (134)