▎ 摘　　要

NOVELTY - The utility model belongs to the field of solar battery device, claims a remote epitaxial structure and Schottky junction solar battery device. The remote epitaxial structure comprises a GaAs substrate, a single-layer graphene layer and an InAs quantum dot array layer laminated in order. The Schottky junction solar cell device comprises an Ag top electrode, a single-layer graphene layer, an InAs quantum dot array layer, a single-layer graphene layer, a GaAs substrate layer and an Au back electrode, which are orderly arranged from up to down. The utility model by introducing a single-layer graphene layer between the gallium arsenide substrate and the indium arsenide epitaxial layer, effectively blocking the mutual diffusion of the indium atom and the gallium atom of the interface, effectively inhibiting the quantum dot structure, inactivation phenomenon, effectively improving the performance of the Schottky junction solar cell device prepared by the same.