• 专利标题:   Plate varactor for use in silicon technologies, has graphene layer placed over electrode in contact with dielectric layer to contribute quantum capacitance component to dielectric layer, and upper electrode formed on graphene layer.
  • 专利号:   US2015255631-A1, US9614107-B2
  • 发明人:   CHEN Z, HAN S, KOSWATTA S O, VALDES G A
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L029/16, H01L029/93, B82Y010/00, B82Y040/00, H01L049/02
  • 专利详细信息:   US2015255631-A1 10 Sep 2015 H01L-029/93 201567 English
  • 申请详细信息:   US2015255631-A1 US720370 22 May 2015
  • 优先权号:   US291596, US720370

▎ 摘  要

NOVELTY - The varactor has electrodes (206, 210) embedded in a surface of a substrate (202). A capacitor dielectric layer (208) is placed over the first electrode. A graphene layer is placed over the first electrode in contact with the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed with the graphene layer. The dielectric layer includes a high dielectric constant. The first electrode and the upper electrode are extended to cover lateral extents of the graphene layer, where the graphene layer includes a single layer of graphene. USE - Plate varactor for use in silicon technologies. ADVANTAGE - The electrodes completely cover graphene area, thus reducing contact resistance and improving varactor's quality factor. The varactor employs quantum capacitance effects of graphene material to adjust capacitance of the varactor. The electrode is formed over edges or periphery of the graphene layer with sufficient coverage area to provide adequate resistance, easy process flow, higher tunability and better performance than conventional counterparts. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an upper electrode formed on a dielectric layer and over a graphene layer. Substrate (202) Graphene material (204) Electrodes (206, 210) Capacitor dielectric layer (208) Relief zones (216)