• 专利标题:   Dynamic random access memory capacitor has dielectric layer, where dielectric layer comprises high dielectric material layer, and low dielectric loss material layer, and provided on both side surfaces of high dielectric material layer, where low dielectric loss material layer is polyimide.
  • 专利号:   US2022165841-A1, CN114551411-A, WO2022110820-A1
  • 发明人:   WANG S, WANG Y, CHEN Z
  • 专利权人:   CHANGXIN MEMORY TECHNOLOGIES INC, CHANGXIN STORAGE TECHNOLOGY CO LTD, CHANGXIN MEMORY TECHNOLOGIES INC
  • 国际专利分类:   H01L027/108, H01L049/02, H01L021/8242, H01L023/64, H01G004/10, H01L021/62
  • 专利详细信息:   US2022165841-A1 26 May 2022 H01L-049/02 202252 English
  • 申请详细信息:   US2022165841-A1 US471243 10 Sep 2021
  • 优先权号:   CN11349123

▎ 摘  要

NOVELTY - Dynamic random access memory capacitor has dielectric layer (2), where dielectric layer comprises high dielectric material layer (22), and low dielectric loss material layer, and provided on both side surfaces of high dielectric material layer. USE - Dynamic random access memory capacitor. ADVANTAGE - The dynamic random access memory capacitor has high dielectric constant and low dielectric loss. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing dynamic random access memory capacitor, which involves: (a) forming a low dielectric loss material layer; (b) forming a high dielectric material layer on the low dielectric loss material layer; and (c) forming a low dielectric loss material layer on the high dielectric material layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-section view of the dynamic random access memory capacitor. First capacitor electrode (1) Dielectric layer (2) First low dielectric loss material layer (21) High dielectric material layer (22) Second low dielectric loss material layer (23)