• 专利标题:   Polymer composite material used in preparing embedded capacitor, FET and other advanced electronic devices, comprises fluorinated ferroelectric polymer matrix including polyvinylidene difluoride, and fluoropolymer grafted graphene filler.
  • 专利号:   CN103951917-A, CN103951917-B
  • 发明人:   BO J, JIANG P, HUANG X, SUN X, YANG K, ZHU M
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   C08J005/18, C08K003/04, C08K009/04, C08K009/06, C08L027/12, C08L027/16, C08L027/20
  • 专利详细信息:   CN103951917-A 30 Jul 2014 C08L-027/16 201468 Pages: 11 Chinese
  • 申请详细信息:   CN103951917-A CN10177803 29 Apr 2014
  • 优先权号:   CN10177803

▎ 摘  要

NOVELTY - A polymer composite material comprises 98-99.75 mass% fluorinated ferroelectric polymer matrix and 0.25-2 mass% modified graphene filler. USE - Polymer composite material used in preparation of embedded capacitor, FET and other advanced electronic devices. ADVANTAGE - The polymer composite material has high flexibility and machinability, high dielectric constant, low dielectric loss, improved dispersibility of graphene, and good interfacial bonding between the polymer substrate and the graphene filler. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the polymer composite material, comprising: (A) adding 50-55 mL N,N-dimethylformamide solution with 4.9-4.9875 g fluorinated ferroelectric polymer matrix and stirring at 60-70 degrees C to dissolve to obtain solution A; (B) adding 10-15 mL N,N-dimethylformamide solution with 0.0125-0.1 g modified graphene at room temperature and stirring for 25-30 minutes to obtain solution B; (C) mixing solutions A and B at room temperature, stirring for 25-30 minutes, performing film-forming, and drying obtained film for 6-7 hours at 80-85 degrees C to obtain polymer composite material; and (D) vacuum drying the polymer composite material at 60-65 degrees C for 10-12 hours, molding at 180-185 degrees C and at 10-15 MPa for 5-7 minutes to obtain the high dielectric polymer composite material.