▎ 摘　　要

NOVELTY - The apparatus (10) has a support unit (200) positioned within a treating space of a process chamber (100). The support unit supports a substrate. A plasma generation unit (400) generates a plasma from a process gas supplied to a treating space. The plasma generation unit comprises a bottom electrode (440) and a top electrode (420) opposite the bottom electrode. The top electrode comprises a plate and an electrode layer on the plate and includes an electrode. The electrode layer is made of a transparent material. USE - Substrate treating apparatus. ADVANTAGE - The apparatus performs a plasma treatment and a fast heating in one chamber, and improves an etching on a substrate or a uniformity of a film formation. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a substrate treating apparatus. 100Process chamber 200Support unit 400Plasma generation unit 420Top electrode 440Bottom electrode