• 专利标题:   Method for preparing cathode material structure of lithium ion battery, involves providing three-dimensional graphene nano-silicon composite layer, locating graphene layer between surface of nano-silicon particles and nano-silicon particles.
  • 专利号:   CN112397706-A
  • 发明人:   FANG X, ZHANG P, WANG C, CHEN X
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   H01M010/0525, H01M004/38, H01M004/62
  • 专利详细信息:   CN112397706-A 23 Feb 2021 H01M-004/38 202122 Pages: 11 Chinese
  • 申请详细信息:   CN112397706-A CN10758845 16 Aug 2019
  • 优先权号:   CN10758845

▎ 摘  要

NOVELTY - The method involves dispersing (S1) nano silicon particles in an organic solvent to prepare a dispersion. A metal substrate is provided (S2). The dispersion liquid is coated on the upper surface of the metal substrate. The structure obtained is placed (S3) in the reaction device, and the carbon source gas is passed. A plasma-enhanced chemical vapor deposition process is configured to form three on the surface of the metal substrate. The three-dimensional graphene nano-silicon composite layer is provided with the nano-silicon particles. A graphene layer is located between the surface of the nano-silicon particles and the nano-silicon particles. USE - Method for preparing cathode material structure of lithium ion battery (all claimed). ADVANTAGE - The method uses simple and easy commercialized nano-silicon particles as the effective lithium storage medium of the composite negative electrode. The plasma enhanced chemical vapor deposition method is configured to realize the composite of high quality nano silicon and three-dimensional graphene. The lithium ion battery cathode material is prepared with high performance and high stability. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for preparing cathode material structure of lithium ion battery. (Drawing includes non-English language text) Step for dispersing nano silicon particles in an organic solvent to prepare a dispersion (S1) Step for providing metal substrate (S2) Step for placing structure obtained in the reaction device, and passing the carbon source gas (S3)