▎ 摘　　要

NOVELTY - The transistor has a graphene layer placed on a first insulation layer. A source leakage electrode layer is placed on the graphene layer. A second insulation layer is placed between the graphene layer and the source leakage electrode layer. A third insulation layer and the second insulation layer are formed in an active region area. A top gate electrode is fixed across a source electrode and a leakage electrode. An adhesive layer is provided with material that is selected from chromium, titanium and nickel. A conductive layer is made of gold material. USE - Graphene site effect transistor. ADVANTAGE - The transistor increases alignment precision, reduces manufacturing cost and eliminates overlapping process. DETAILED DESCRIPTION - The transistor comprises an insulation material layer provided with material that is selected from aluminum oxide and hafnium oxide. An INDEPENDENT CLAIM is also included for a graphene site effect transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene site effect transistor.