▎ 摘　　要

NOVELTY - Depositing (M1) (510) nano-graphene comprises flowing (524) at least one hydrocarbon precursor into reaction chamber to adsorb onto metal layer of substrate at temperature of ≤ 400° C, where the metal layer interacts with the adsorbed hydrocarbon precursors to produce nano-graphene layer on the metal layer, and exposing (516) the nano-graphene layer to plasma to treat the nano-graphene layer on the metal layer of the substrate. The metal layer comprises copper, ruthenium, nickel, molybdenum, cobalt, preferably cobalt. The carbon-containing radicals are generated from a source gas. The hydrocarbon precursors into the reaction chamber comprises: flowing the hydrocarbon precursors with hydrogen-helium into the reaction chamber; and flowing the hydrocarbon precursors with oxygen into the reaction chamber. The nano-graphene layer to plasma comprises exposing the nano-graphene layer to remote hydrogen-helium plasma. USE - The method is useful for depositing nano-graphene on metal layer of substrate. ADVANTAGE - The method: provides nano-graphene with high electrical conductivity, high thermal conductivity; and has good mechanical strength and toughness, optical transparency, and high electron mobility, among other favorable properties. DESCRIPTION OF DRAWING(S) - The figure illustrates flow diagram of example method for depositing nano-graphene. 510Depositing nano-graphene 512Pretreating metal layer 514Flowing hydrocarbon precursor 516Exposing nano-graphene layer