▎ 摘　　要

NOVELTY - This utility new type claims a copper-indium-selenium nanometre crystal silicon thin film solar cell taking graphene as electric conduction material, wherein the solar cell structure from upper to lower in turn is: front surface metal electrode, n type heavy doped graphene thin film, n-type nano-crystalline silicon thin film, a p-type nano-crystalline silicon film, an intrinsic graphene transition layer, n type vulcanization cadmium thin film, a p-type copper-indium-selenium thin film, a p-type heavily doped graphene thin film, metal back electrode. This utility new type of advantages is: the n-type and p-type nano-crystalline silicon thin film composed of a cell structure, the forbidden band width control composed of the second structure cell in 1.4-1.7eV; the n type vulcanization cadmium film and p-type copper-indium-selenium thin film, the forbidden band width control in 1.0-1.2eV; different forbidden band width of a combined phase to absorb sunlight; to graphene as electric conduction material of solar cell, a preparation of solar cell performance is more stable, the photoelectric conversion efficiency is high.