▎ 摘　　要

NOVELTY - The structure has a high-quality hafnium silicon oxynitride (HfSiON) gate dielectric part formed with a graphene channel layer. A refractory metal (WSI) gate metal is deposited with the HfSiON gate dielectric part. A source/drain metal is formed with a n-type source/drain epitaxial layer, where the source/drain epitaxial layer is made of molybdenum disulfide and a hetero-junction channel layer is made of graphene and molybdenum disulfide. The WSI gate metal is formed on a gate dielectric layer, where thickness of the graphene channel layer is for about 8 nm. USE - Graphene transistor structure. ADVANTAGE - The structure has high performance. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene transistor structure.