▎ 摘　　要

NOVELTY - The method involves making a composite target by mixing graphite and nickel powder. A mixed thin film containing graphite and nickel is deposited on a semiconductor substrate (110) within chamber using the radio frequency (RF) magnetic sputtering process. The sputtering process is performed in a vacuum chamber system by a deposition apparatus. The deposited mixed thin film on semiconductor substrate is heat-treated at a temperature of 800 degrees C for 5 minutes. USE - Method for manufacturing grapheme (claimed) used in solar cell and sensor lamp. ADVANTAGE - By heat-treating deposited mixed thin film on semiconductor substrate at specific temperature for preset time, the manufacturing process of graphene can be simplified. The generation of methane gas can be reduced, so that the safety during manufacturing process of graphene can be improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the manufacturing process of graphene. Semiconductor substrate (110) Nickel thin film (122) Graphene layer (130)