▎ 摘　　要

NOVELTY - The light emitting diode has a substrate formed with first isolation layer and second isolation layer. A light emitting unit is formed between the first isolation layer and the second isolation layer. The light emitting unit is formed with first graphene layer, a nitride buffer layer and a doped n-gallium nitride layer. A blue light indium gallium nitride/gallium nitride multi-quantum well layer is formed with a doped p-gallium nitride layer. A first electrode is fixed on the doped n-gallium nitride layer. A second electrode is provided on a doped p-indium gallium nitride layer. USE - Single-chip integrated nitride light emitting wavelength adjustable white light emitting diode. ADVANTAGE - The light emitting diode improves the device quality, integration degree, performance and service life, and controls the color temperature and color rendering index. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of single-chip integrated nitride light-emitting wavelength adjustable white light emitting diode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a single-chip integrated nitride light-emitting wavelength adjustable white light emitting diode.