▎ 摘　　要

NOVELTY - The utility model claims a super-junction power device, comprising: a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a column structure of the second conductivity type, located in the epitaxial layer, a body contact region, located at the top of the column structure; gate structure, portions located on the upper surface of the epitaxial layer, a source region located in the body contact region, the front metal electrode, the body contact region, the surface of the source region and an interlayer dielectric layer, a graphene layer, located on the surface of the semiconductor substrate, the back metal electrode. surface located on the graphene layer. The producing cost of the power device junction of the utility model compared with the present structure can be effectively reduced, and the thickness of the graphene layer can be controlled within a very small range, it is favorable for the further miniaturization of the device and further reduce the device power consumption; in addition, a super-junction power device of the utility model can effectively reduce the forward conduction resistance of the device and improving the device conduction capability.