• 专利标题:   Synthesis of multilayer-type heterojunction ternary boron-carbon-nitrogen functional material involves alternately stacking high-purity hexagonal boron nitride and graphite or graphene powder in mold under protective gas atmosphere.
  • 专利号:   CN103979975-A, CN103979975-B
  • 发明人:   WAN A, DI J
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   C04B035/58, C04B035/622
  • 专利详细信息:   CN103979975-A 13 Aug 2014 C04B-035/58 201471 Pages: 7 Chinese
  • 申请详细信息:   CN103979975-A CN10201072 13 May 2014
  • 优先权号:   CN10201072

▎ 摘  要

NOVELTY - Multilayer-type heterojunction ternary boron-carbon-nitrogen functional material is synthesized by alternately stacking high-purity hexagonal boron nitride and graphite or graphene powder in mold under protective gas atmosphere, pressing into blank with pressing machine, maintaining temperature and pressure, cooling, and relieving pressure. USE - Synthesis of multilayer-type heterojunction ternary boron-carbon-nitrogen functional material (claimed). ADVANTAGE - Multilayer-type heterojunction ternary boron-carbon-nitrogen functional material has low impurity content, and synthesis is low-cost and simple. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of hexagonal boron nitride and graphite or graphene powder layered assembly. High-purity hexagonal boron nitride (1) Graphite or graphene powder (2)