• 专利标题:   Nickel gallium-layered double hydroxides/nitrogen-doped graphene quantum dots/foamed nickel composite electrode material used as positive electrode material in asymmetric supercapacitor, includes nitrogen-doped graphene quantum dots loaded on supporting framework, and etched with gallium ions.
  • 专利号:   CN113517143-A, CN113517143-B
  • 发明人:   YAN Y, WANG X, HUO P, SHA W, ZHANG G, WANG H, LI C
  • 专利权人:   UNIV JIANGSU
  • 国际专利分类:   H01G011/86, H01G011/30
  • 专利详细信息:   CN113517143-A 19 Oct 2021 H01G-011/30 202198 Chinese
  • 申请详细信息:   CN113517143-A CN10281830 16 Mar 2021
  • 优先权号:   CN10281830

▎ 摘  要

NOVELTY - A nickel gallium-layered double hydroxides/nitrogen-doped graphene quantum dots/foamed nickel composite electrode material includes two-dimensional nickel-organic framework grown on foamed nickel as supporting framework, where nitrogen-doped graphene quantum dots are loaded on the supporting framework, and etched with gallium ions. USE - Nickel gallium-layered double hydroxides/nitrogen-doped graphene quantum dots/foamed nickel composite electrode material used as positive electrode material in preparation of asymmetric supercapacitor (all claimed). ADVANTAGE - Due to doping of large number of nitrogen functional groups, the wettability of electrolyte is improved, and by adding gallium ion to etch, high-performance nickel gallium-layered double hydroxides are prepared, thereby facilitating the reaction of electrolyte ions and active materials, and reducing impedance of materials and improving cycle stability. Since positive electrode material is utilized to assemble asymmetric supercapacitor with ultra-high power density and energy density, effective way is provided for constructing new electrode material with high energy storage density, excellent cycle performance and increased power density. The composite electrode material has excellent mechanical performance, interlaced conductive network and fast electronic transmission. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: 1. preparation method of nickel gallium-layered double hydroxides/nitrogen-doped graphene quantum dots/foamed nickel composite electrode material; and 2. asymmetric supercapacitor.